CPH3350
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID= -- 1mA, VGS=0V
VDS= -- 20V, VGS=0V
VGS=±8V, VDS=0V
--20
--1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS= -- 10V, ID= -- 1mA
VDS= -- 10V, ID= -- 1.5A
ID= -- 1.5A, VGS= -- 4.5V
--0.4
4.3
64
--1.3
83
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID= -- 1A, VGS= -- 2.5V
ID= -- 0.2A, VGS= -- 1.8V
VDS=--10V, f=1MHz
See speci ? ed Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0V
89
131
375
77
58
8.1
26
42
37
4.6
0.8
1.3
--0.83
124
196
--1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
0V
--4.5V
VIN
VIN
VDD= --10V
ID= --1.5A
RL=6.67 Ω
PW=10 μ s
D.C. ≤ 1%
D
VOUT
G
CPH3350
P.G
50 Ω
S
Ordering Information
Device
CPH3350-TL-H
CPH3350-TL-W
Package
CPH3
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A0151-2/6
相关PDF资料
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相关代理商/技术参数
CPH3350-TL-W 制造商:ON Semiconductor 功能描述:PCH 1.8V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH 1.8V DRIVE SERIES
CPH3351 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3351_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
CPH3351-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
CPH3351-TL-W 功能描述:MOSFET P-CH 60V 1.8A CPH3 制造商:on semiconductor 系列:- 包装:剪切带(CT) 零件状态:有效 FET 类型:MOSFET P 通道,金属氧化物 FET 功能:逻辑电平栅极,4V 驱动 漏源极电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):1.8A(Ta) 不同?Id,Vgs 时的?Rds On(最大值):250 毫欧 @ 1A,10V 不同 Id 时的 Vgs(th)(最大值):2.6V @ 1mA 不同 Vgs 时的栅极电荷(Qg):6nC @ 10V 不同 Vds 时的输入电容(Ciss):262pF @ 20V 功率 - 最大值:1W 工作温度:150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:3-CPH 标准包装:1
CPH3355 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3355_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
CPH3355-TL-H 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube